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| HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data Symbol Test Conditions VDSS I D25 170A 170A RDS(on) 10mW 10mW trr 200ns 200ns IXFN170N10 IXFK170N10 100V 100V TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 170N10 170N10 100 100 20 30 170 76 680 170 60 5 560 -55 ... +150C 150 -55 ... +150C 100 100 20 30 170 NA 680 170 60 5 V V V V A A A mJ S G D S VDSS VDGR VGS VGSM ID25 ID125 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight T J = 25C to 150C T J = 25C to 150C Continuous Transient TC = 25C TC = 125C T C = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C D (TAB) miniBLOC, SOT-227 B (IXFN) E153432 S G V/ns 600 W C C V~ V~ D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 N/A N/A 0.9/6 N/A 10 N/A 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDSS temperature coefficient VDS = VGS, ID = 8mA VGS(th) temperature coefficient VGS= 20V, VGS = 0V VDS= 0.8 * VDSS V VGS= 0 V VGS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 ms, duty cycle d 2 % Min. 100 Characteristic Values Typ. Max. 0.077 V %/K 4 -0.183 200 V %/K nA mA mA mW Features * International standard packages * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density 97505D (7/00) 2 TJ = 25C TJ = 125C 400 2 10 IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFK170N10 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-264 AA TO-264 AA miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 0.15 0.21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 R G = 1 W (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 * ID25, pulse test Characteristic Values Min. Typ. Max. 65 10,300 2,200 1,200 40 90 158 79 515 62 276 0.22 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFN170N10 TO-264 AA Outline Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr Q RM IRM Notes: VGS = 0 Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % I F = 50 A, -di/dt = 100 A/ms, V R = 100 V Characteristic Values Min. Typ. Max. miniBLOC, SOT-227 B 170 680 A A 1.5 175 1.1 12.6 V ns mC A M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 1. RGS = 1 MW 2. Pulse width limited by TJM. 3. Chip capability 4. Current limited by external leads (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK170N10 Figure 1. Output Characteristics at 25OC 300 TJ=25OC IXFN170N10 Figure 2. Output Characteristics at 125OC 300 VGS=10V 9V 250 ID - Amperes ID - Amperes 200 150 VGS=10V 9V 8V 7V TJ=125OC 250 200 150 8V 7V 6V 6V 100 50 0 5V 100 50 0 5V 0 2 4 6 8 10 0 2 4 6 8 10 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 1.8 1.6 1.4 1.2 1.0 0.8 0.6 TJ = 25OC VGS = 10V Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.2 VGS=10V TJ = 125OC RDS(ON) - Normalized RDS(ON) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 25 ID=170A ID=85A 0 50 100 150 200 250 300 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 200 175 150 Figure 6. Admittance Curves 100 80 ID - Amperes 125 100 75 50 25 0 -50 ID - Amperes 60 TJ = 125oC 40 TJ = 25oC 20 0 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFK170N10 Figure 7. Gate Charge 12 10 Vds= 50V ID = 85A IG =10mA IXFN170N10 Figure 8. Capacitance Curves 18000 15000 VGS - Volts 8 6 4 2 0 Capacitance - pF f = 1MHz 12000 9000 6000 3000 0 Coss Crss Ciss 0 100 200 300 400 500 600 0 10 20 30 40 Gate Charge - nC V DS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 300 250 Figure10. Forward Bias Safe Operating Area 170 1 00 1 ms ID - Amperes 200 150 100 T J = 25 O C T J = 125 OC ID - Amperes 10 ms 10 T C = 25 O C 100 ms DC 50 0 0.2 1 1 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 00 V SD - Volts V DS - Volts Figure 11. Transient Thermal Resistance 0.40 0.35 0.30 R(th)JC - K/W 0.25 0.20 0.15 0.10 0.05 0.00 10 -3 10 -2 10 -1 10 0 10 1 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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